MMDF2N05ZR2

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk

≥ 2.0) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

50

—

56

55

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 15 Vdc, VGS = 0 Vdc)

(VDS = 15 Vdc, VGS = 0 Vdc, TJ = 55°C)

IDSS

—

—

—

—

2.0

25

µAdc

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0)

IGSS

—

0.14

0.5

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk

≥ 2.0) (3)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

—

3.0

–5.0

4.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(Cpk

≥ 2.0) (3)

(VGS = 10 Vdc, ID = 1.5 Adc)

(VGS = 5.0 Vdc, ID = 0.6 Adc)

RDS(on)

—

—

200

350

300

500

m

Ω

Forward Transconductance

(VDS = 15 Vdc, ID = 2.5 Adc)

gFS

—

2.0

—

mMhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

15 Vdc V

0 Vdc

Ciss

—

104

—

pF

Output Capacitance

(VDS = 15 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

58

—

Transfer Capacitance

f = 1.0 MHz)

Crss

—

16

—

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

30 Vd

I

0 6 Ad

td(on)

—

24

48

ns

Rise Time

(VDD = 30 Vdc, ID = 0.6 Adc,

VGS =10Vdc

tr

—

46

92

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 25 Ω)

td(off)

—

130

260

Fall Time

G

)

tf

—

71

142

Gate Charge

(see figure 8)

(V

25 Vd

I

1 3 Ad

QT

—

3.3

4.6

nC

(see figure 8)

(VDS = 25 Vdc, ID = 1.3 Adc,

Q1

—

0.7

—

( DS

, D

,

VGS = 10 Vdc)

Q2

—

1.3

—

Q3

—

1.4

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

—

0.82

1.4

Vdc

Reverse Recovery Time

(I

2 0 Adc V

0 Vdc

trr

—

66

—

ns

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

23

—

dIS/dt = 100 A/µs)

tb

—

43

—

Reverse Recovery Storage Charge

QRR

—

0.08

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.