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Motorola TMOS Power MOSFET Transistor Device Data

Product Preview

Medium Power Surface Mount Products

TMOS Dual N-Channel

Field Effect Transistors

WaveFET

™ devices are an advanced series of power MOSFETs which utilize Motorola’s

latest MOSFET technology process to achieve the lowest possible on–resistance per silicon

area. They are capable of withstanding high energy in the avalanche and commutation

modes and the drain–to–source diode has a very low reverse recovery time. WaveFET

™

devices are designed for use in low voltage, high speed switching applications where power

efficiency is important. Typical applications are dc–dc converters, and power management

in portable and battery powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass storage products

such as disk drives and tape drives. The avalanche energy is specified to eliminate the

guesswork in designs where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

• Zener Protected Gates Provide Electrostatic

Discharge Protection

• Designed to withstand 200 V Machine Model

and 2000 V Human Body Model

• Low RDS(on) Provides Higher Efficiency and

Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by

Logic ICs

• Miniature SO–8 Surface Mount Package —

Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Max

Unit

Drain–to–Source Voltage

VDSS

20

V

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

20

V

Gate–to–Source Voltage — Continuous

VGS

± 12

V

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

DEVICE MARKING

ORDERING INFORMATION

D3200

Device

Reel Size

Tape Width

Quantity

D3200

MMDF3200Z

13

″

12 mm embossed tape

4000 units

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMDF3200Z/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

N1–Source

TOP VIEW

N1–Gate

N2–Source

N2–Gate

N1–Drain

N1–Drain

N2–Drain

N2–Drain

CASE 751–06, Style 11

SO–8

MMDF3200Z

DUAL TMOS

POWER MOSFET

11.5 AMPERES

20 VOLTS

RDS(on) = 0.015 OHM

Motorola Preferred Device

™

N1–SOURCE

N1–GATE

8

N1–DRAIN

7

2

1

N2–SOURCE

N2–GATE

6

N2–DRAIN

5

4

3

1

2

3

4

8

7

6

5

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