©2013 Silicon Storage Technology, Inc.

DS75056A

04/13

5

2.4 GHz High-Power and High-Gain Power Amplifier

SST12LP15A

Data Sheet

Electrical Specifications

The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC volt-

age and current specifications. Refer to Figures 3 through 10 for the RF performance.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute

Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these conditions or conditions greater than those defined in the

operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-

ditions may affect device reliability.)

1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-

imum rating of average output power could cause permanent damage to the device.

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Table 2: Operating Range

Range

Ambient Temp

Industrial

-40°C to +85°C

3.3V

T2.1 75056

Table 3: DC Electrical Characteristics at 25ºC

Symbol

Parameter

Min.

Typ

Max.

Unit

Supply Voltage at pins 5, 12, 14, 16

3.0

3.3

4.2

V

Supply Current

for 802.11g, 24 dBm

300

mA

for 802.11b, 25 dBm

350

mA

Idle current for 802.11g to meet EVM<4% @ 23dBm

80

mA

Shut down current

1

µA

Reference Voltage for 1st and 2nd Stage, with 270

Ω resistor

2.85

2.90

2.95

V

Reference Voltage for 3rd Stage, with 100

Ω resistor

2.85

2.90

2.95

V

T3.1 75056