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SST12LP19E Datasheet(PDF) 8 Page - Microchip Technology

Part # SST12LP19E
Description  2.4 GHz High-Power, High-Gain Power Amplifier
PDF  23 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST12LP19E Datasheet(HTML) 8 Page - Microchip Technology

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©2013 Silicon Storage Technology, Inc.
DS70005041C
05/13
8
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP19E
Data Sheet
Table 5: RF Characteristics at 25°C1
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
FL-U
Frequency range
2412
2484
MHz
G
Small signal gain
24
25
dB
GVAR1
Gain variation over band (2412–2484 MHz)
±0.5
dB
GVAR2
Gain ripple over channel (20 MHz)
0.2
dB
2f, 3f, 4f,
5f
Harmonics at 22 dBm, without external filters
-30
dBc
EVM
Added EVM @ 19.5 dBm output power for 8-con-
tact XSON2
3
%
Figure 15
Added EVM @ 18 dBm output power for 8-contact
XSON2
2.5
3
%
Figure 16
Added EVM @ 19.5 dBm output power for 6-con-
tact XSON/X2SON2
3
%
Figure 17
Added EVM @ 18 dBm output power for 6-contact
XSON/X2SON2
2.5
3
%
Figure 18
POUT
(802.11g
MASK)
Output power to meet Spectrum Mask for 8-contact
XSON2
22.5
23.5
dBm
Figure 15
Output power to meet Spectrum Mask for 8-contact
XSON2
21
22
dBm
Figure 16
Output power to meet Spectrum Mask for 6-contact
XSON/X2SON2
22.5
23.5
dBm
Figure 17
Output power to meet Spectrum Mask for 6-contact
XSON/X2SON2
21
22
dBm
Figure 18
POUT
(802.11b
MASK)
Output power to meet Spectrum Mask for 8-contact
XSON3
22
23
dBm
Figure 15
Output power to meet Spectrum Mask for 8-contact
XSON3
21
22
dBm
Figure 16
Output power to meet Spectrum Mask for 6-contact
XSON/X2SON3
22
23
dBm
Figure 17
Output power to meet Spectrum Mask for 6-contact
XSON/X2SON3
21.5
22.5
dBm
Figure 18
T5.2 75041
1. EVM measured with “sequence-only” equalizer channel estimation
2. 802.11g OFDM 54 Mbps signal
3. 802.11b DSSS 1 Mbps signal



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