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DMN4800LSSL Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMN4800LSSL Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 6 page ![]() DMN4800LSSL Document number: DS35016 Rev. 3 - 2 4 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN4800LSSL Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A 0 0.4 0.8 1.2 1.6 I = 250µA D I = 1mA D 0 4 8 12 16 20 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V) SD T = 25°C A 0 5 10 15 20 25 30 10 100 1,000 10,000 Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V) DS Ciss Crss Coss 0 2 4 6 8 10 02 4 6 8 10 12 14 16 Fig. 10 Total Gate Charge Q , TOTAL GATE CHARGE (nC) G I = 11.6A D I = 9A D 0 5 10 15 20 25 30 Fig. 11 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 1 10 100 1,000 10,000 T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A |
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