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LT8697 Datasheet(PDF) 3 Page - Linear Dimensions Semiconductor |
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LT8697 Datasheet(HTML) 3 Page - Linear Dimensions Semiconductor |
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3 / 28 page  LT8697 3 8697p For more information www.linear.com/LT8697 elecTrical characTerisTics The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Notes 2, 4) PARAMETER CONDITIONS MIN TYP MAX UNIT USB5V Current VISN = 5V, VISP – VISN = 40mV, RCBL = 13.7k VISN = 5V, VISP – VISN = 10mV, RCBL = 13.7k VISN = 5V, VISP – VISN = 0V, RCBL = 13.7k RCBL = Open l l l l 58 12 0 0 60 15 2 1 62 23 8 2 µA µA µA µA Current Sense Voltage (VISP – VISN) VCTRL = 1.5V, VISN = 5V VCTRL = 1.5V, VISN = 0V VCTRL = 800mV, VISN = 5V VCTRL = 800mV, VISN = 0V VCTRL = 200mV, VISN = 5V VCTRL = 200mV, VISN = 0V l l l l l l 45.5 44.5 37.5 36 6 5 48 48.5 39.5 40 9.5 10 50 53 42 44.5 13 15 mV mV mV mV mV mV RCBL Monitor Voltage VISP – VISN = 40mV, RCBL = 13.7k VISP – VISN = 10mV, RCBL = 13.7k l l 720 130 800 205 880 280 mV mV RCBL Output Current Limit VISP – VISN = 50mV, VRCBL = 0V –2 –3 –4 mA ISP, ISN Bias Current VISP = VISN = 0V, 5V –20 20 µA ICTRL Current VICTRL = 1.5V –0.5 –2 –3 µA INTVCC Voltage VSYS = 0V, 5V 3.4 V INTVCC Undervoltage Lockout 2.6 2.9 3.15 V SYS Voltage VIN = 12V l 5.63 5.8 5.92 V SYS Voltage to Disable Forced Continuous Mode 7.5 V SYS Current in Regulation VSYS = 5V, RT = 56.2k l 3 4 5 mA Dropout Voltage (VIN – VSYS) VSYS = 5V, ILOAD = 2.1A 450 mV Maximum Duty Cycle in Dropout 96 97.5 99 % Minimum On-Time ILOAD = 1A l 30 45 70 ns Minimum Off-Time ILOAD = 0.5A 50 80 110 ns Minimum VIN for SYS Regulation at Full Frequency RT = 16.5k, VUSB5V = 0V, ILOAD = 0.5A l 6.2 7 7.9 V Oscillator Frequency RT = 140k RT = 56.2k RT = 16.5k l l l 250 620 1.9 300 700 2.00 340 750 2.05 kHz kHz MHz Top Power NMOS On-Resistance ISW = 1A 120 mΩ Top Power NMOS Current Limit l 3.2 4.8 6 A Bottom Power NMOS On-Resistance VINTVCC = 3.4V, ISW = 1A 65 mΩ Bottom Power NMOS Current Limit VINTVCC = 3.4V 3.5 4.5 5.8 A SW Leakage Current VIN = 42V, VSW = 0V, 42V 0.1 5 µA EN/UV Threshold VEN/UV Rising l 0.94 1.0 1.06 V EN/UV Hysteresis 40 mV EN/UV Bias Current VEN/UV = 2V –20 20 nA PG Upper Threshold Offset from VUSB5V VUSB5V Falling l 6 9 12 % PG Lower Threshold Offset from VUSB5V VUSB5V Rising l –6 –9 –12 % PG Hysteresis 1.3 % PG Pull-Down Resistance VPG = 0.1V l 680 2000 Ω PG Transition Delay VUSB5V from 5V to 4V 40 µs SYNC Threshold VSYNC Falling VSYNC Rising 0.8 1.6 1.1 2.0 1.4 2.4 V V SYNC Current VSYNC = 2V –40 40 nA TR/SS Current VTR/SS = 0V –1.2 –2.2 –3.2 µA TR/SS Pull-Down Resistance Fault Condition, VTR/SS = 0.1V 230 Ω |
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