MBRF3060CT datasheet(1/1 Pages) TGS

Part #	MBRF3060CT

Description	TO-220F Plastic-Encapsulate Diodes

PDF	1 Pages

Scroll/Zoom	100%

Manufacturer	TGS [Tiger Electronic Co.,Ltd]

Direct Link	http://www.tgselec.com

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1 / 1 page

B,Apr,2013

TO-220F Plastic-Encapsulate Diodes

MBR

F3060CT SCHOTTKY BARRIER RECTIFIER

FEATURES

Schottky Barrier Chip

Guard Ring Die Construction for Transient Protection

Low Power Loss,High Efficiency

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( Ta=25

℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

VRRM

Peak repetitive reverse voltage

VRWM

Working peak reverse voltage

VR

DC blocking voltage

60

V

VR(RMS)

RMS reverse voltage

42

V

IO

Average rectified output current

30

A

IFSM

Non-Repetitive peak forward surge current

8.3ms half sine wave

200

A

PD

Power dissipation

2

W

RΘJA

Thermal resistance from junction to ambient

50

℃/W

Tj

Junction temperature

125

℃

Tstg

Storage temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Reverse voltage

V(BR)

IR=1mA

60

V

Reverse current

IR

VR=60V

0.2

mA

VF1

IF=15A

0.8

V

Forward voltage

VF2*

IF=30A

0.95

V

Typical total capacitance

Ctot*

VR=4V,f=1MHz

400

pF

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

TO-220F

1. ANODE

2. CATHODE

3. ANODE

TIGER ELECTRONIC CO.,LTD

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