IXFN44N80Q3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

22

37

S

C

iss

10950

pF

C

oss

V

957

pF

C

rss

95

pF

R

Gi

Gate Input Resistance

0.20

Ω

t

d(on)

45

ns

t

r

60

ns

t

d(off)

63

ns

t

f

20

ns

Q

g(on)

185

nC

Q

gs

V

67

nC

Q

gd

83

nC

R

thJC

0.16

°C/W

R

thCS

0.05

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

44

A

I

SM

Repetitive, Pulse Width Limited by T

JM

176

A

V

SD

I

1.4

V

t

rr

300 ns

Q

RM

1.8

μC

I

RM

13.4

A

Resistive Switching Times

V

R

I

V