STPS1H100MF datasheet(3/7 Pages) STMICROELECTRONICS

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STPS1H100MF

Characteristics

3/7

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5)

(W)

F(AV)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

(A)

F(AV)

(A)

F(AV)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

125

150

175

th(j-a)=Rth(j-c)

δ=tp/T

th(j-a)=250°C/W

(°C)

amb

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(Tj)

(25°C)

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values)

Figure 6.

Forward voltage drop versus

forward current

I (A)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

c=25 °C

c=75 °C

c=125 °C

δ =0.5

t(s)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

j=25 °C

(Maximum values)

j=125 °C

(Maximum values)

j=125 °C

(Maximum values)

j=125 °C

(Typical values)

j=125 °C

(Typical values)

(A)

(V)

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