ALM-11036 datasheet(2/12 Pages) AVAGO

2 / 12 page

Absolute Maximum Rating [1] TA = 25° C

Symbol

Parameter

Units

Absolute Max.

Vdd

Device Voltage,

RF output to ground

5.5

Pin,max

CW RF Input Power

(Vdd = 5.0 V, Idd = 100 mA)

dBm

+15

Pdiss

Total Power Dissipation [3]

0.715

Junction Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to 150

Thermal Resistance [2]

(Vdd = 5.0 V, Idd = 100 mA) θjc = 83.1 °C/W

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using Infra-Red

measurement technique.

3. Power dissipation with unit turned on. Board

temperature Tc is 25° C. Derate at 12.3 mW/°C

for TC > 92° C.

Electrical Specifications [1, 4]

RF performance at TA = 25° C, Vdd = 5 V, 849 MHz, measured on demo board in Figure 1 with component listed in Table 1

for DC bypass.

Symbol

Parameter and Test Condition

Frequency (MHz)

Units

Min.

Typ.

Max.

Idd

Drain Current

107

Gain

776

849

–

14.2

15.4

15.6

–

17.2

IRL

Input Return Loss, 50

Ω source

–

ORL

Output Return Loss, 50

Ω load

–

NF [2]

Noise Figure

776

849

–

0.84

0.78

–

0.95

IIP3 [3]

Input Third Order Intercept Point

dBm

18.7

21.3

–

IP1dB

Input Power at 1 dB Gain Compression

dBm

2.85

–

Bypass IL

Bypass Insertion Loss, 50

Ω load Vdd = 0 V

776

849

–

0.7

0.82

–

1.1

Bypass IRL

Input Return Loss, 50

Ω source Vdd = 0 V

–

Bypass ORL

Output Return Loss, 50

Ω load Vdd = 0 V

–

ISOL

Bypass Isolation @LNA ON Vdd = 5 V

–

Notes:

1. Measurements at 849 MHz obtained using demo board described in Figure 1.

2. For NF data, board losses of the input have not been de-embedded.

3. IIP3 test condition: FRF1 = 849 MHz, FRF2 = 850 MHz with input power of -15 dBm per tone.

4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application

note for more details.

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