TPCP8701 datasheet(2/5 Pages) TOSHIBA

Part #	TPCP8701

Description	TOSHIBA Transistor Silicon NPN Epitaxial Type

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

Logo

2 / 5 page

TPCP8701

2004-05-11

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 100 V, IE = 0

⎯

100

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

⎯

100

Collector-emitter brakedown voltage

V (BR) CEO

IC = 10 mA, IB = 0

⎯

hFE (1)

VCE = 2 V, IC = 0.3 A

400

⎯

1000

DC current gain

hFE (2)

VCE = 2 V, IC = 1 A

200

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 1 A, IB = 20 mA

⎯

0.14

Base-emitter saturation voltage

VBE (sat)

IC = 1 A, IB = 20 mA

⎯

1.10

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1MHz

⎯

Rise time

⎯

Storage time

tstg

⎯

500

⎯

Switching time

Fall time

See Figure 3 circuit diagram

VCC ∼− 30 V, RL = 30 Ω

IB1 = −IB2 = 33.3 mA

⎯

120

⎯

Figure 3. Switching Time Test Circuit & Timing Chart

IB1

20µs

IB2

IB1

IB2

Input

Output

VCC

Duty cycle ＜1%

TPCP8701 Datasheet(PDF) 2 Page - Toshiba Semiconductor

TPCP8701 Datasheet(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5

Datasheet Download

Link URL