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2SC4228 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SC4228 Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 9 page ![]() DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD The mark shows major revised points. NEC Compound Semiconductor Devices 1993, 2003 Document No. PU10452EJ01V0DS (1st edition) (Previous No. P10372EJ2V0DS00) Date Published December 2003 CP(K) Printed in Japan DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.9 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain : S21e2 = 7.5 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz • 3-pin super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC4228 50 pcs (Non reel) • 8 mm wide embossed taping 2SC4228-T1 3 kpcs/reel • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation Ptot Note 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air |
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