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IRFR024R Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRFR024R Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 7 page  www.kersemi.com 1 Power MOSFET IRFR024, IRFU024, SiHFR024, SiHFU024 FEATURES • Dynamic dV/dt Rating • Surface Mount (IRFR024/SiHFR024) • Straight Lead (IRFU024/SiHFU024) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω)VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR024PbF IRFR024TRPbFa - IRFU024PbF SiHFR024-E3 SiHFR024T-E3a - SiHFU024-E3 SnPb IRFR024 IRFR024TRa IRFR024TRLa IRFU024 SiHFR024 SiHFR024Ta SiHFR024TLa SiHFU024 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 14 A TC = 100 °C 9.0 Pulsed Drain Currenta IDM 56 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 91 mJ Maximum Power Dissipation TC = 25 °C PD 42 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns |
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