STS8DN3LLH5 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	STS8DN3LLH5

Description	Dual N-channel 30 V, 0.0155 廓, 10 A, SO-8 STripFET??V Power MOSFET

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 12 page

January 2010

Doc ID 16967 Rev 1

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12

STS8DN3LLH5

Dual N-channel 30 V, 0.0155

Ω, 10 A, SO-8

STripFET™ V Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications

Description

This STripFET™V Power MOSFET technology is

among the latest improvements, which have been

especially tailored to achieve very low on-state

resistance providing also one of the best-in-class

FOM.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

ID

STS8DN3LLH5

30 V

< 0.019

Ω

10 A (1)

1.

The value is rated according Rthj-pcb

SO-8

Table 1.

Device summary

Order code

Marking

Package

Packaging

STS8DN3LLH5

8DN3LL

SO-8

Tape and reel

www.st.com

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