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MTP1306 Datasheet(PDF) 2 Page - Motorola, Inc |
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MTP1306 Datasheet(HTML) 2 Page - Motorola, Inc |
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2 / 8 page ![]() MTP1306 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS 30 — — Vdc Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 10 100 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 1.5 2.0 Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 38 Adc) (VGS = 5.0 Vdc, ID = 38 Adc) RDS(on) — — 5.8 7.4 6.5 8.5 m W Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C) VDS(on) — — 0.44 — 0.5 0.38 Vdc Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc) gFS 15 55 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc Ciss — 2560 3584 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss — 1305 1827 Transfer Capacitance f = 1.0 MHz) Crss — 386 772 SWITCHING CHARACTERISTICS(2) Turn–On Delay Time (V 15 Vd I 75 Ad td(on) — 17 35 ns Rise Time (VDD = 15 Vdc, ID = 75 Adc, VGS =5 0Vdc tr — 170 340 Turn–Off Delay Time VGS = 5.0 Vdc, RG = 4.7 Ω) td(off) — 68 136 Fall Time G ) tf — 145 290 Gate Charge (V 24 Vd I 75 Ad QT — 50 70 nC (VDS = 24 Vdc, ID = 75 Adc, Q1 — 8.3 — ( DS , D , VGS = 5.0 Vdc) Q2 — 25.3 — Q3 — 17.2 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.75 0.64 1.1 — Vdc Reverse Recovery Time (I 20 Ad V 0 Vd trr — 84 — ns (IS = 20 Adc, VGS = 0 Vdc, ta — 35 — ( S , GS , dIS/dt = 100 A/µs) tb — 53 — Reverse Recovery Stored Charge QRR — 0.13 — µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
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