APT5014BLLG datasheet(21/44 Pages) MICROSEMI

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Power Module Part Numbering System

III

VII

VIII

III

VII

III

VII

Trade Mark

IGBT Type:

GF = NPT or NPT FAST

GFQ = NPT ULTRA FAST

GL = TRENCH 4

GT = TRENCH 3

GV = Mix NPT/TRENCH

CV = Mix TRENCH/CoolMOS

Current:

Ic @ Tc=80°C

Topology:

A = Phase Leg

BB = Boost Buck

DA = Boost Chopper

DDA = Double Boost Chopper

DH = Asymmetrical Bridge

DSK = Double Buck Chopper

DU = Dual Common Source

H = Full Bridge

HR = T-Type 3-Level

SDA = Double Boost + Bypass Diode

SK = Buck Chopper

TA = Triple Phase Leg

TDU = Triple Dual Common Source

TL = Three Level

U = Single Switch

VDA = Interleaved PFC

X = Three Phase Bridge

Blocking Voltage:

60 = 600V

120 = 1200V

170 = 1700V

Option:

A = AIN Substrate

C = SiC Diode

D = Series Diode

T = Temperature Sensor

W = Clamping Parallel Diode

Package:

1 = SP1

2 = SP2

3 = SP3

P = SP6-P

D1 = D1 (34mm)

D3 = D3 (62mm)

D4 = D4 (62mm)

G = RoHS Compliant

Trade Mark

MOSFET Type:

MC = MOSFET SiC

M = MOSFET

C = CoolMOS

Blocking Voltage:

08 = 75V

80 = 800V

10 = 100V

90 = 900V

20 = 200V

100 = 100V

50 = 500V

120 = 120V

60 = 600V

Topology:

A = Phase Leg

BB = Boost Buck

DA = Boost Chopper

DDA = Double Boost Chopper

DH = Asymmetrical Bridge

DSK = Double Buck Chopper

DU = Dual Common Source

H = Full Bridge

HR = T-Type 3-Level

SDA = Double Boost + Bypass Diode

SK = Buck Chopper

TA = Triple Phase Leg

TDU = Triple Dual Common Source

TL = Three Level NPC

U = Single Switch

VDA = Interleaved PFC

RDSON @ Tc=25°C

240

M24

Option:

A = AlN Substrate

C = SiC Diode

D = Series Diode

F = FREDFET

S = Series and Parallel Diodes

T = Temperature Sensor

U = Ultrafast FREDFET

Package:

1 = SP1

2 = SP2

3 = SP3

P = SP6-P

G = RoHS Compliant

Trade Mark

Diode Type:

DF = FRED

DC = SiC

DSK = Schottky

Current:

IF @ Tc=80°C

Topology:

AA = Dual Common Anode

BB = Boost Buck

AK = Dual Series

KK = Dual Common Cathode

H = Single Phase Bridge

U = Single Switch

X = Three Phase Bridge

Blocking Voltage:

20 = 200V

40 = 400V

60 = 600V

100 = 1000V

120 = 1200V

160 = 1600V

170 = 1700V

Package:

1 = SP1

3 = SP3

G = RoHS Compliant

IGBT Modules

MOSFET Modules

Diode Modules

III IV

V VI VII VIII

III

VI VII VIII

III IV

V VI VII

APT GL 475 A 120 T D3

APT

60 DA M24 T 1

APT DR

X 160 1

VIII

Optional Materials

Optional materials are available upon demand on most of the

listed standard power modules. Options are indicated with a

letter in the sufﬁx of the module part number. Temperature

Sensor Option is indicated in the catalog with "YES" or

"option" when available on standard part or on demand.

AIN Substrate for higher thermal conductivity

AlSiC Base plate material for improved temperature cycling capabilities

Temperature Sensor (NTC or PTC) for Case Temperature information

SiC Diode for higher efﬁciency

Si3N4 Substrate

Press ﬁt terminals (for SP3 package only)

APT5014BLLG Datasheet(PDF) 21 Page - Microsemi Corporation

APT5014BLLG Datasheet(HTML) 21 Page - Microsemi Corporation

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