MTSF3N02HD

7

Motorola TMOS Power MOSFET Transistor Device Data

t, TIME

Figure 13. Reverse Recovery Time (trr)

di/dt = 300 A/

µs

Standard Cell Density

High Cell Density

tb

trr

ta

trr

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define the

maximum simultaneous drain–to–source voltage and drain cur-

rent that a transistor can handle safely when it is forward biased.

Curves are based upon maximum peak junction temperature

and a case temperature (TC) of 25°C. Peak repetitive pulsed

power limits are determined by using the thermal response data

in conjunction with the procedures discussed in AN569, “Tran-

sient Thermal Resistance – General Data and Its Use.”

Switching between the off–state and the on–state may

traverse any load line provided neither rated peak current

(IDM) nor rated voltage (VDSS) is exceeded, and that the

transition time (tr, tf) does not exceed 10 µs. In addition

the total power averaged over a complete switching cycle

must not exceed (TJ(MAX) – TC)/(R

θJC).

Figure 14. Maximum Rated Forward Biased

Safe Operating Area

0.1

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

1

10

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.01

VGS = 8 V

SINGLE PULSE

TC = 25°C

10

0.1

dc

10 ms

1

100

100

1 ms

100

µs