STM32F217VG datasheet(76/173 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F21xxx

76/173

Doc ID 17050 Rev 8

On-chip peripheral current consumption

The current consumption of the on-chip peripherals is given in Table 23. The MCU is placed

under the following conditions:

Table 21.

Typical and maximum current consumptions in Standby mode

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

TA = 25 °C

TA = 85 °C TA = 105 °C

VDD =

1.8 V

VDD=

2.4 V

VDD =

3.3 V

VDD = 3.6 V

IDD_STBY

Supply current

in Standby

mode

Backup SRAM ON, low-speed

oscillator and RTC ON

3.0

3.4

4.0

15.1

25.8

µA

Backup SRAM OFF, low-

speed oscillator and RTC ON

2.4

2.7

3.3

12.4

20.5

Backup SRAM ON, RTC OFF

2.4

2.6

3.0

12.5

24.8

Backup SRAM OFF, RTC OFF

1.7

1.9

2.2

9.8

19.2

Based on characterization, not tested in production.

Table 22.

Typical and maximum current consumptions in VBAT mode

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

TA = 25 °C

TA = 85 °C

TA =

105 °C

VDD =

1.8 V

VDD=

2.4 V

VDD =

3.3 V

VDD = 3.6 V

IDD_VBAT

Backup

domain supply

current

Backup SRAM ON, low-speed

oscillator and RTC ON

1.29

1.42

1.68

µA

Backup SRAM OFF, low-speed

oscillator and RTC ON

0.62

0.73

0.96

Backup SRAM ON, RTC OFF

0.79

0.81

0.86

Backup SRAM OFF, RTC OFF

0.10

Based on characterization, not tested in production.

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