STU5N52K3 datasheet(4/23 Pages) STMICROELECTRONICS

4 / 23 page

Electrical characteristics

STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3

4/23

Doc ID 16952 Rev 2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

525

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V; VDS=0

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 2.2 A

1.2

1.5

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

545

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VDS = 0 to 420 V, VGS = 0

Gate input resistance

f=1 MHz open drain

4.7

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 420 V, ID = 4.4 A,

VGS = 10 V

(see Figure 19)

STU5N52K3 Datasheet(PDF) 4 Page - STMicroelectronics

STU5N52K3 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

Datasheet Download

Link URL