CSD19533KCS datasheet(4/10 Pages) TI1

4 / 10 page

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

2.4

−75 −50 −25

100 125 150 175 200

TC - Case Temperature (ºC)

VGS = 6V

VGS = 10V

ID = 55A

G001

0.0001

0.001

0.01

0.1

100

0.2

0.4

0.6

0.8

VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

1.4

1.6

1.8

2.2

2.4

2.6

2.8

3.2

3.4

−75 −50 −25

100 125 150 175 200

TC - Case Temperature (ºC)

ID = 250uA

G001

VGS - Gate-to- Source Voltage (V)

TC = 25°C,I D = 55A

TC = 125°C,I D = 55A

G001

Qg - Gate Charge (nC)

ID = 55A

VDS = 50V

G001

100

1000

10000

100000

100

VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

CSD19533KCS

SLPS482 – DECEMBER 2013

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

Figure 4. Gate Charge

Figure 5. Capacitance

TEXT ADDED FOR SPACING

Figure 6. Threshold Voltage vs. Temperature

Figure 7. On-State Resistance vs. Gate-to-Source Voltage

TEXT ADDED FOR SPACING

Figure 8. Normalized On-State Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

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