Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

July. 2013. Rev. 3.0

1/5

Features

■ High ruggedness

■ R

Ω)@V

■ Gate Charge (Typical 57nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially excellent

avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

N-channel TO-220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain to Source Voltage

900

V

8.0*

A

5*

A

Drain current pulsed

(note 1)

32

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

928

mJ

Repetitive Avalanche Energy

(note 1)

130

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

69

W

0.5

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

1.8

Thermal resistance, Case to Sink

-

Thermal resistance, Junction to ambient

46.7

*. Drain current is limited by junction temperature.

BV

I

D

: 8.0A

R

SW8N90

SAMWIN

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 8N90

SW8N90

TO-220F

TUBE

1

2

3

1. Gate 2. Drain 3. Source

TO-220F