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MIMMD100EB160X Datasheet(PDF) 2 Page - Micross Components |
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MIMMD100EB160X Datasheet(HTML) 2 Page - Micross Components |
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2 / 2 page ![]() MIMMD100EB160X ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C unless otherwise specified Symbol Test Condition Value Unit IR VR= VRRM; TJ = 25 ≤0. 5 mA VR= VRRM; TJ =TJM ≤5 mA VF IF=200A; TJ=125 1.4 V VT0 For power-loss calculations only 0.8 V RthJC per diode; DC current 0.9 K/W Per module 0.15 K/W RthCS per diode; DC current(typ.) 0.42 K/W per module(typ.) 0.07 K/W dS Creeping distance on surface 10 mm dA Cree page distance in air 9.4 mm a Max. allowable acceleration 50 m/s2 NOTE: Data according to IEC 60747 and refer to a single diode unless otherwise stated. Package Outline (Dimensions in mm) |
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