CMPT3019 datasheet(1/2 Pages) CENTRAL

Part #	CMPT3019

Description	NPN SILICON TRANSISTOR

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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Central

Semiconductor Corp.

TM

166

SOT-23 CASE

CMPT3019

NPN SILICON TRANSISTOR

DESCRIPTION

The

CENTRAL

SEMICONDUCTOR

CMPT3019 type is an NPN silicon transistor

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for very high current, general

purpose amplifier applications.

Marking Code is C3A.

MAXIMUM RATINGS (TA=25

oC)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

7.0

V

Collector Current

IC

500

A

Collector Current (Peak)

ICM

1.0

A

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

oC

Thermal Resistance

ΘJA

357

oC/W

ELECTRICAL CHARACTERISTICS (TA=25

oC unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=90V

10

nA

IEBO

VEB=5.0V

10

nA

BVCBO

IC=100µA

120

V

BVCEO

IC=30mA

80

V

BVEBO

IE=100µA

7.0

V

VCE(SAT)

IC=150mA, IB=15mA

0.2

V

VCE(SAT)

IC=500mA, IB=50mA

0.5

V

VBE(SAT)

IC=150mA, IB=15mA

1.1

V

hFE

VCE=10V, IC=0.1mA

50

hFE

VCE=10V, IC=10mA

90

hFE

VCE=10V, IC=150mA

100

300

hFE

VCE=10V, IC=500mA

50

fT

VCE=10V, IC=50mA, f=1.0MHz 100

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

12

pF

Cib

VEB=0.5V, IC=0, f=1.0MHz

60

pF

NF

VCE=10V, IC=100mA, RS=1kΩ, f=1.0kHz

4.0

dB

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