MJE13002G-A-T92-R datasheet(7/9 Pages) UTC

7 / 9 page

MJE13002

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

7 of 9

www.unisonic.com.tw

QW-R204-014.C

TYPICAL CHARACTERISTICS

0.02

Collector Saturation Region

0.05 0.01

1.6

1.2

0.8

0.4

0.02

0.05 0.1

0.2

0.5

IB, BASECURRENT (AMP)

Ic=0.1A 0.3A 0.5A

1A 1.5A

Tj=25?

0.02

Base-Emitter Voltage

0.03 0.05

1.4

1.2

0.8

0.6

0.4

0.07

0.2

0.1

0.3

0.5 0.7

IC, COLLECTORCURRENT (AMP)

Tj=-55°C

25°C

150°C

VBE(sat)@IC/IB=3

- - - - - - VBE(on)@VCE=2V

Collector-Emitter Saturation Region

0.35

0.3

0.25

0.2

0.15

IC, COLLECTORCURRENT (AMP)

IC/IB=3

0.1

0.05

0.02 0.03 0.05

0.07

0.2

0.1

0.3

0.5 0.7 1

Collector Cutoff Region

VBE,BASE-EMITTERVOLTAGE(VOLTS)

-0.4

-0.2

+0.

+0.2

+0.4

-1

REVERSE

FORWARD

VCE=250V

Capacitance

500

300

200

100

VR,REVERSEVOLTAGE (VOLTS)

0.1 0.2

0.5

200

210 20

50 100

500 1000

Cib

Cob

Tj=150°C

125°C

100°C

75°C

50°C

25°C

Tj=-55°C

25°C

150°C

DCCurrent Gain

Tj=150?

25?

-55?

VCE=2V

- - - - - -VCE=5V

0.02 0.03 0.05 0.07

0.1

0.2

0.3

0.5 0.7 1

IC, COLLECTORCURRENT (AMP)

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