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2SC4596 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC4596 Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4596 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=50µA , IC=0 5 V VCEsat-1 Collector-emitter saturation voltage IC=3A, IB=0.15A 0.3 V VCEsat-2 Collector-emitter saturation voltage IC=4A, IB=0.2A 0.5 V VBEsat-1 Base-emitter saturation voltage IC=3A, IB=0.15A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=4A, IB=0.2A 1.5 V ICBO Collector cut-off current VCB=100V, IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=1A ; VCE=2V 60 320 Cob Output capacitance IE=0 ; VCB=10V,f=1MHz 80 pF fT Transition frequency IC=0.5A ; VCE=10V 120 MHz Switching times ton Turn-on time 0.3 µs ts Storage time 1.5 µs tf Fall time IC=3A ; RL=10@ IB1= IB2=0.15A VCCA30V 0.3 µs hFE Classifications D E F 60-120 100-200 160-320 |
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