MMBT1116AL-L-AE3-R datasheet(3/4 Pages) UTC

Part #	MMBT1116AL-L-AE3-R

Description	PNP EPITAXIAL SILICON TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 4 page

MMBT1116/A

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R206-098.C



TYPICAL CHARACTERISTICS

Static Characteristic

-100

-2

-4

-6

-10

-8

-80

-60

-40

-20

Collector-Emitter Voltage, VCE (V)

IB=-200μA

IB=-150μA

IB=-100μA

IB=-50μA

Static Characteristic

-1.0

0.0

-0.2

-0.4

-0.6

-1.0

-0.8

-0.6

-0.4

-0.2

IB=-3.0mA

IB=-2.5mA

IB=-1.5mA

IB=-0.5mA

0.0

IB=-1.0mA

IB=-2.0mA

IB=-3.5mA

IB=-5.0mA

Collector-Emitter Voltage, VCE (V)

IB=-250μA

IB=-4.5mA IB=-4.0mA

DC Current Gain

1000

-0.1

-1

-10

100

Collector Current, Ic (mA)

-0.01

VCE=-2V

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-10

-0.01

-0.1

-1

-10

-1

-0.1

-0.01

VBE(sat)

VCE(sat)

IC=20IB

Collector Current, IC (A)

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