MD3DFN3 3A Full Bridge Rectifier

GENERAL DESCRIPTION

Dual 20 V N−Channel with 3.5 A Schottky Barrier Diode, 4.0 x

4.0 x 0.5 mm DFN Package

FEATURES

• Full−Bridge Rectifier Block

• Up to 3.2 A operation

• Low RDS(on) MOSFET to minimize conduction loss

• Low gate charge MOSFET

• Low VF Schottky diode

• Ultra Low Inductance Package

APPLICATIONS

• Wireless Charging

• AC−DC Rectification

• Optimized for Power Management Applications for Portable

Products, such as Cell Phones, PMP, DSC, GPS, and others

Absolute Maximum Ratings

(Tc=25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

700

V

Continuous Drain Current @ TC=25°C

ID

10

A

Continuous Drain Current @ TC=100°C

ID

6.0

A

Pulsed Drain Current

IDM

40

A

Gate-Source Voltage

VGS

±30

V

Single Pulsed Avalanche Energy

EAS

658

mJ

Avalanche Current

IAR

10

A

Repetitive Avalanche Energy

EAR

17.8

mJ

Peak Diode Recovery dV/dt

dV/dt

4.5

V/ns

Power Dissipation (TC=25°C)

PD

35

W

Power Dissipation (TC=100°C)

0.30

W

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

NOTE:

1. Repeativity rating : pulse width limited by junction temperature

2. L = 15mH, IAS =9.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C

3. ISD ≤ 9.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

5. Essentially independent of operating temperature.