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UTT4N10L-AA3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UTT4N10L-AA3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD UTT4N10 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-858.a 3.5A, 100V N-CHANNEL TRENCHMOS LOGIC LEVEL FET DESCRIPTION The UTC UTT4N10 is an N-Channel Trench MOS Logic Level FET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance and low gate charge. The UTC UTT4N10 is suitable for consumer, computing and communications, etc. FEATURES * RDS(ON)=200mΩ @ VGS=5V, ID=1.75A * Low gate charge(Typ.=6.8nC) SYMBOL SOT-223 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UTT4N10L-AA3-R UTT4N10G-AA3-R SOT-223 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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