 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
UTT6N10ZG-AA3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UTT6N10ZG-AA3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
|
|
1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-921, A 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge. The UTC UTT6N10Z is usually used in DC-DC Conversion. FEATURES * RDS(on) =80mΩ @VGS = 10 V,ID=6A * High Switching Speed * Low Crss (Typically 3.1pF) * Low Gate Charge(Typically 4.3nC) SYMBOL 1.Gate 3.Source 2.Drain SOT-223 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UTT6N10ZL-AA3-R UTT6N10ZG-AA3-R SOT-223 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
Similar Part No. - UTT6N10ZG-AA3-R |
|
Similar Description - UTT6N10ZG-AA3-R |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
British ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
