2SC2525 datasheet(2/3 Pages) SAVANTIC

2 / 3 page

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2525

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=1mA; RBE=;

120

V(BR)CBO

Collector-base breakdown voltage

IC=50µA; IE=0

120

V(BR)EBO

Emitter-base breakdown voltage

IE=50µA; IC=0

VCEsat

Collector-emitter saturation voltage

IC=5 A;IB=0.5 A

0.7

1.8

VBE

Base-emitter voltage

IC=5A ; VCE=5V

1.25

1.7

ICBO

Collector cut-off current

VCB=120V; IE=0

µA

IEBO

Emitter cut-off current

VEB=7V; IC=0

µA

hFE-1

DC current gain

IC=1A ; VCE=5V

200

hFE-2

DC current gain

IC=7A ; VCE=5V

Transition frequency

IC=1A ; VCB=10V,f=1MHz

MHz

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

180

300

Switching times

Rise time

0.3

µs

Storage time

1.3

µs

Fall time

IC=7.5A; RL=4D

IB1=-IB2=0.75A

0.2

µs

2SC2525 Datasheet(PDF) 2 Page - Savantic, Inc.

2SC2525 Datasheet(HTML) 2 Page - Savantic, Inc.

Html Pages

1 2 3

Datasheet Download

Link URL