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DF685 Datasheet(PDF) 1 Page - Dynex Semiconductor |
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DF685 Datasheet(HTML) 1 Page - Dynex Semiconductor |
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1 / 8 page  DF685 1/8 APPLICATIONS s Snubber Diode For GTO Applications FEATURES s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS KEY PARAMETERS V RRM 4500V I F(AV) 445A I FSM 4500A Q r 650 µC t rr 5 µs CURRENT RATINGS Symbol Parameter Conditions Double Side Cooled I F(AV) Mean forward current I F(RMS) RMS value I F Continuous (direct) forward current Single Side Cooled (Anode side) I F(AV) Mean forward current I F(RMS) RMS value I F Continuous (direct) forward current Units Max. Half wave resistive load, T case = 65 oC 445 A T case = 65 oC 700 A T case = 65 oC 610 A Half wave resistive load, T case = 65 oC 280 A T case = 65 oC 440 A T case = 65 oC 365 A 4500 4400 4300 4200 4100 4000 DF685 45 DF685 44 DF685 43 DF685 42 DF685 41 DF685 40 Conditions V RSM = V RRM + 100V Lower voltage grades available. Type Number Repetitive Peak Reverse Voltage V RRM V Outline type code: M779b. See Package Details for further information. DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 |
Similar Part No. - DF685 |
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Similar Description - DF685 |
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