STB95N4F3 datasheet(4/20 Pages) STMICROELECTRONICS

4 / 20 page

Electrical characteristics

STB95N4F3, STD95N4F3, STP95N4F3

4/20

Doc ID 13288 Rev 4

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min. Typ. Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 40 V,

VDS = 40 V,Tc = 125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 40 A

5.0

5.8

VGS= 10 V, ID= 40 A for TO-220

5.4

6.2

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS =25 V, f=1 MHz, VGS=0

2200

580

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=20 V, ID = 80 A

VGS =10 V

(see Figure 14)

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