2SC5508 datasheet(3/16 Pages) NEC

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Preliminary Data Sheet P13865EJ1V0DS00

2SC5508

TYPICAL CHARACTERISTICS (TA = +25 °C)

Thermal/DC Characteristics

Collector Current vs. Collector to Emitter Voltage

DC Current Gain vs. Collector Current

0.001

200

100

0.01

0.1

100

Collector to Emitter Voltage VCE (V)

Collector Current IC (mA)

Total Power Dissipation vs.

Ambient Temperature, Case Temperature

Collector Current vs. DC Base Voltage

250

200

150

100

Ambient Temperature TA (

°C), Case Temperature TC (°C)

DC Base Voltage VBE (V)

100

125

150

0.2

0.4

0.6

0.8

1.0

1.2

PT-TA: Free air

PT-TA: Mounted on ceramic board

(15 mm

× 15 mm, t = 0.6 mm)

PT-TC: When case temperature

is specified

VCE = 2 V

700 A

µµ

750 A

VCE = 2 V

650 A

600 A

550 A

500 A

450 A

400 A

350 A

300 A

250 A

200 A

150 A

100 A

IB = 50 A

Capacitance/fT Characteristics

Reverse Transfer Capacitance vs. Collector to Base Voltage

0.50

0.40

0.30

0.20

0.10

Collector to Base Voltage VCB (V)

1.0

2.0

3.0

4.0

5.0

f = 1 MHz

100

Gain Bandwidth Product vs. Collector Current

Collector Current IC (mA)

VCE = 3 V

f = 2 GHz

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