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SSRF02N80SL Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSRF02N80SL Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 5 page  Elektronische Bauelemente SSRF02N80SL 2A , 800V , RDS(ON) 6.1 N-Ch Enhancement Mode Power MOSFET 03-Dec-2013 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ITO-220 RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSRF02N80SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ±30 V TC=25°C 2 A Continuous Drain Current TC=100°C ID 1.2 A Pulsed Drain Current IDM 8 A TC=25°C 33 Total Power Dissipation Derate above 25°C PD 0.26 W Single Pulse Avalanche Energy 1 EAS 180 mJ Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 120 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.79 °C / W Notes: 1. L=30mH,IAS=3.3A, VDD=100V, RG=25 , Starting TJ =25°C 1 Gate 3 Source 2 Drain A M J K L L G F B N D E C H Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 14.60 16.50 H 2.70 4.00 B 9.50 10.50 J 0.90 1.50 C 12.60 14.00 K 0.50 0.95 D 4.30 5.10 L 2.34 2.74 E 2.30 3.2 M 2.40 3.60 F 2.30 3.10 N φ 3.0 φ 3.4 G 0.30 0.75 |
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