| Electronic Components Datasheet Search |
|
RG10 Datasheet(PDF) 2 Page - EIC discrete Semiconductors |
|
|
|||||||||||||||||||||||||||||
RG10 Datasheet(HTML) 2 Page - EIC discrete Semiconductors |
|
2 / 2 page ![]() RATING AND CHARACTERISTIC CURVES ( RG10 - RG10Y ) FIG.1 - REVERSE RECOVERY TIM E CHARACTERISTIC AND TEST CIRCUIT DIAGRAM + NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.2 - DERATING CURVE FOR OUTPUT FIG.3 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 FORWARD VOLTAGE, VOLTS 60Hz RESISTIVE OR INDUCTIVE LOAD 80 60 40 20 100 100 10 1.0 40 0 50 0 30 20 10 0.1 10 80 0.01 0.01 1.0 0.1 100 140 0 20 40 60 120 PERCENT OF RATED REVERSE VOLTAGE, (%) TJ = 25 °C TJ = 100 °C TJ = 25 °C Pulse Width = 300 µs 2% Duty Cycle 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C + 0.5 A 0 - 0.25 - 1.0 A Trr 1 cm SET TIME BASE FOR 15 ns/cm RG10Y RG10 RG10A 50 Vdc (approx) D.U.T. OSCILLOSCOPE ( NOTE 1 ) 1 Ω 50 Ω 10 Ω PULSE GENERATOR ( NOTE 2 ) |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |