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HM5259165B Datasheet(PDF) 22 Page - Elpida Memory

Part # HM5259165B
Description  512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword16-bit4-bank/16-Mword8-bit4-bank /32-Mword4-bit4-bank PC/133, PC/100 SDRAM
PDF  63 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

HM5259165B Datasheet(HTML) 22 Page - Elpida Memory

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HM5259165B/HM5259805B/HM5259405B-75/A6
Data Sheet E0118H10
22
Operation of the SDRAM
The following chapter shows operation example of the products below.
Organization
Input/output mask
CAS latency
8-Mword
× 16-bit × 4 bank
DQMU/DQML
2/3
16-Mword
× 8-bit × 4 bank
DQM
32-Mword
× 4-bit × 4 bank
DQM
Note:
The SDRAM should be used according to the product capability (See “Features”, “Pin Description”
and “AC Characteristics”).
Read/Write Operations
Bank active: Before executing a read or write operation, the corresponding bank and the row address must be
activated by the bank active (ACTV) command. An interval of t
RCD is required between the bank active
command input and the following read/write command input.
Read operation: A read operation starts when a read command is input. Output buffer becomes Low-Z in
the (
CAS Latency - 1) cycle after read command set. The SDRAM can perform a burst read operation.
The burst length can be set to 1, 2, 4, 8. The start address for a burst read is specified by the column address
and the bank select address (BA0/BA1) at the read command set cycle. In a read operation, data output starts
after the number of clocks specified by the
CAS Latency. The CAS Latency can be set to 2 or 3.
When the burst length is 1, 2, 4, 8, the Dout buffer automatically becomes High-Z at the next clock after the
successive burst-length data has been output.
The
CAS latency and burst length must be specified at the mode register.



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