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2N1893 Datasheet(PDF) 1 Page - Continental Device India Limited |
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2N1893 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page  NPN SILICON PLANAR TRANSISTORS 2N 1893 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage VCEO 80 V Collector Emitter Voltage VCER 100 V Collector Base Voltage VCBO 120 V Emitter Base Voltage VEBO 7.0 V Collector Current Continuous IC 0.5 A Total DeviceDissipation @ Ta=25ºC PD 0.8 W Derate Above 25ºC 4.57 mW/ºC Total Deivice Dissipation@ Tc=25ºC PD 3.0 W Derate Above 25ºC 17.2 mW/ºC Operating And Storage Junction Tj, Tstg -65 to +200 ºC Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 219 ºC/W Junction to Case Rth(j-c) 58.3 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Collector Emitter Breakdown Voltage BVCER(sus) IC=100mA,RBE =10Ω 100 V Collector Emitter Sustaining Voltage BVCEO(sus) *IC=10mA, IB=0 80 V Collector Base Breakdown Voltage BVCBO IC=100µA, IE=0 120 V Emitter Base Breakdown Voltage BVEBO IE =100µA, IC=0 7.0 V Collector Cutoff Current ICBO VCB=90V, IE=0 10 nA VCB=90V, IE=0,TA=150ºC 15 µA Emitter Cutoff Current IEBO VEB=5V,IC=0 10 nA DC Current Gain hFE*IC=1mA,VCE=10V 20 IC=10mA,VCE=10V 35 IC=10mA,VCE=10V 20 TC=-55ºC IC=150mA,VCE=10V 40 120 Collector Emitter (Sat) Voltage VCE(Sat) IC=50mA,IB=5.0mA 1.2 V IC=150mA,IB=15mA 5.0 V Base Emitter (Sat) Voltage VBE(Sat) IC=50mA,IB=5.0mA 0.9 V IC=150mA,IB=15mA 1.3 Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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