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STPSC8H065 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STPSC8H065
Description  650 V power Schottky silicon carbide diode
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC8H065 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
January 2014
DocID023603 Rev 4
1/14
STPSC8H065
650 V power Schottky silicon carbide diode
Datasheet
− production data
Features
• No reverse recovery charge in application
current range
• Switching behavior independent of
temperature
• High forward surge capability
• Insulated package TO-220AC Ins:
– Insulated voltage: 2500 V rms
– Typical package capacitance: 7 pF
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
K
K
A
K
K
A
A
NC
NC
K
A
K
A
TO-220AC
STPSC H065D
8
TO-220AC Ins
STPSC H065D
8I
DPAK
STPSC H065B-TR
8
DPAK
2
STPSC H065 -TR
8G
Table 1. Device summary
Symbol
Value
IF(AV)
8 A
VRRM
650 V
Tj (max)
175 °C
www.st.com


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