NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00029C

DOC

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFF140 _J_ __ __

¦

¦

¦

¦

¦

¦

¦

¦

¦

¦

+

Screening

TX = TX Level

TXV = TXV Level

S = S Level

¦

¦

¦

¦

BW = Welded Copper Leads

SFF140J

SFF140JBW

28 AMP / 100 Volts

0.077

Ω

N-Channel

POWER MOSFET

Features:

• Rugged Construction with Polysilicon Gate Cell

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dV/dt Performance

• Increased Reverse Energy Capability

• Low Input and Transfer Capacitance for Easy Paralleling

• Ceramic Seals for Improved Hermeticity

• Hermetically Sealed Surface Mount Power Package

• TX, TXV, Space Level Screening Available

• Replacement for IRF140/540 Types

• Available with enhanced flexibility Cu pins: SFF140JBW

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

100

Volts

Gate – Source Voltage

±20

Volts

Continuous Collector Current

28

Amps

Power Dissipation

62.5

47.5

W

Operating & Storage Temperature

Top & Tstg

-55 to +150

ºC

Maximum Thermal Resistance

Junction to Case

2

ºC/W

TO-257

Pin Out:

Pin1: Drain

Pin2: Source

Pin3: Gate

PIN 1

PIN 2

PIN 3

SUFFIX: JD

SUFFIX: JU

SUFFIX: J