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MBRB2045CT Datasheet(PDF) 1 Page - General Semiconductor

Part # MBRB2045CT
Description  SCHOTTKY RECTIFIER
PDF  2 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

MBRB2045CT Datasheet(HTML) 1 Page - General Semiconductor

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MBRB2035CT THRU MBRB2060CT
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts
Forward Current - 20.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ Dual rectifier construction, positive center tap
♦ Metal silicon junction,
majority carrier conduction
♦ Low power loss,
high efficiency
♦ High current capability, low forward voltage drop
♦ High surge capability
♦ Guardring for overvoltage protection
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic
Terminals: Leads solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MBRB2035CT
MBRB2045CT
MBRB2050CT
MBRB2060CT
UNITS
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Volts
Maximum working peak reverse voltage
VRWM
35
45
50
60
Volts
Maximum DC blocking voltage
VDC
35
45
50
60
Volts
Maximum average forward rectified current
at TC=135°C
I(AV)
20.0
Amps
Peak repetitive forward current per leg at TC=135°C
(rated VR, sq. wave 2.0 KHZ)
IFRM
20.0
Amps
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
IFSM
150.0
Amps
Peak repetitive reverse surge current (NOTE 1)
IRRM
1.0
0.5
Amps
Maximum instantaneous
IF=10A, TC=25°C
_
0.80
forward voltage per leg at
IF=10A, TC=125°C
VF
0.57
0.70
Volts
(NOTE 2)
IF=20A, TC=25°C
0.84
0.95
IF=20A, TC=125°C
0.72
0.85
Maximum instantaneous reverse current at
rated DC blocking voltage per leg
TC=25°C
IR
0.1
0.15
mA
TC=125°C
15.0
150.0
Voltage rate of change, (rated VR)
dv/dt
10,000
V/
µs
Typical thermal resistance per leg (NOTE 3)R
ΘJC
2.0
°C/W
Operating junction temperature range
TJ
-65 to +150
°C
Storage temperature range
TSTG
-65 to +175
°C
NOTES: (1) 2.0
µs pulse width, f=1.0KHZ
(2) Pulse test: 300
µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case per leg
4/98
TO-263AB
Dimensions in inches and (millimeters)
-T-
SEATING
PLATE
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.027 (0.686)
0.037 (0.940)
1
2
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
0.090 (2.29)
0.110 (2.79)
0.245 (6.22)
MIN
- HEATSINK
PIN 1
K
K
0.095 (2.41)
0.100 (2.54)
K
PIN 2
0.047 (1.19)
0.055 (1.40)
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