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MBRB2045CT Datasheet(PDF) 1 Page - General Semiconductor |
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MBRB2045CT Datasheet(HTML) 1 Page - General Semiconductor |
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1 / 2 page ![]() MBRB2035CT THRU MBRB2060CT SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 20.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ Guardring for overvoltage protection ♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed MECHANICAL DATA Case: JEDEC TO-263AB molded plastic Terminals: Leads solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Weight: 0.08 ounce, 2.24 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS MBRB2035CT MBRB2045CT MBRB2050CT MBRB2060CT UNITS Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Volts Maximum working peak reverse voltage VRWM 35 45 50 60 Volts Maximum DC blocking voltage VDC 35 45 50 60 Volts Maximum average forward rectified current at TC=135°C I(AV) 20.0 Amps Peak repetitive forward current per leg at TC=135°C (rated VR, sq. wave 2.0 KHZ) IFRM 20.0 Amps Peak forward surge current 8.3ms single half sine- wave superimposed on rated load (JEDEC Method) IFSM 150.0 Amps Peak repetitive reverse surge current (NOTE 1) IRRM 1.0 0.5 Amps Maximum instantaneous IF=10A, TC=25°C _ 0.80 forward voltage per leg at IF=10A, TC=125°C VF 0.57 0.70 Volts (NOTE 2) IF=20A, TC=25°C 0.84 0.95 IF=20A, TC=125°C 0.72 0.85 Maximum instantaneous reverse current at rated DC blocking voltage per leg TC=25°C IR 0.1 0.15 mA TC=125°C 15.0 150.0 Voltage rate of change, (rated VR) dv/dt 10,000 V/ µs Typical thermal resistance per leg (NOTE 3)R ΘJC 2.0 °C/W Operating junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +175 °C NOTES: (1) 2.0 µs pulse width, f=1.0KHZ (2) Pulse test: 300 µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case per leg 4/98 TO-263AB Dimensions in inches and (millimeters) -T- SEATING PLATE 0.380 (9.65) 0.420 (10.67) 0.320 (8.13) 0.360 (9.14) 0.575 (14.60) 0.625 (15.88) 0.027 (0.686) 0.037 (0.940) 1 2 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.018 (0.46) 0.025 (0.64) 0.080 (2.03) 0.110 (2.79) 0.090 (2.29) 0.110 (2.79) 0.245 (6.22) MIN - HEATSINK PIN 1 K K 0.095 (2.41) 0.100 (2.54) K PIN 2 0.047 (1.19) 0.055 (1.40) NEW PRODUCT NEW PRODUCT NEW PRODUCT |
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