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STPS1L40AY Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS1L40AY
Description  Automotive low drop power Schottky rectifier
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS1L40AY Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS1L40-Y
2/9
Doc ID 18247 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.23 x IF(AV) + 0.19 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
40
V
IF(RMS) Forward rms current
8
A
IF(AV)
Average forward current
TL = 130 °C δ = 0.5
1
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
60
A
IRRM
Repetitive peak reverse current
tp = 2 µs F = 1 kHz square
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
1
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
900
W
Tstg
Storage temperature range
- 65 to + 150
°C
Tj
Operating junction temperature range(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
-40 to + 150
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to lead
SMA
30
°C/W
SMB
25
Table 4.
Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
-
35
µA
Tj = 125 °C
-
6
10
mA
VF
(1)
Forward voltage drop
Tj = 25 °C
IF = 1 A
--
0.5
V
Tj = 125 °C
-
0.37
0.42
Tj = 25 °C
IF = 2 A
-
-
0.63
Tj = 125 °C
-
0.5
0.61
dPtot
dTj
<
1
Rth(j-a)



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