SP3222EB datasheet(2/22 Pages) EXAR

2 / 22 page

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com

SP3222EB/SP3232EB_103_081414

NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.

These are stress ratings only and functional operation

of the device at these ratings or any other above those

indicated in the operation sections of the speciﬁcations

below is not implied. Exposure to absolute maximum

rating conditions for extended periods of time may

affect reliability and cause permanent damage to the

device.

CC.......................................................-0.3V to +6.0V

V+ (NOTE 1).......................................-0.3V to +7.0V

V- (NOTE 1)........................................+0.3V to -7.0V

V+ + |V-| (NOTE 1)...........................................+13V

CC (DC VCC or GND current).........................+100mA

Input Voltages

TxIN, EN..............................................-0.3V to +6.0V

RxIN...................................................................+15V

Output Voltages

TxOUT.............................................................+13.2V

RxOUT, .......................................-0.3V to (V

CC +0.3V)

Short-Circuit Duration

TxOUT....................................................Continuous

Storage Temperature......................-65°C to +150°C

Unless otherwise noted, the following speciﬁcations apply for V

CC = +3.0V to +5.5V with TAMB = TMIN to TMAX,

C1 - C4 = 0.1µF.

Power Dissipation per package

20-pin SSOP (derate 9.25mW/oC above +70oC)..............750mW

18-pin SOIC (derate 15.7mW/oC above +70oC)..............1260mW

20-pin TSSOP (derate 11.1mW/oC above +70oC).............890mW

16-pin SSOP (derate 9.69mW/oC above +70oC)...............775mW

16-pin Wide SOIC (derate 11.2mW/oC above +70oC)........900mW

16-pin TSSOP (derate 10.5mW/oC above +70oC)..............850mW

16-pin nSOIC (derate 13.57mW/oC above +70oC)...........1086mW

Maximum Junction Temperature .......................................+125°C

Thermal Resistance ΘJA ..............................................100.4°C/W

Thermal Resistance ΘJC ................................................19.0°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

MIN.

TYP.

MAX.

UNITS

CONDITIONS

DC CHARACTERISTICS

Supply Current

0.3

1.0

no load, V

CC = 3.3V,

AMB = 25

oC, TxIN = GND or V

Shutdown Supply Current

1.0

µA

SHDN = GND, VCC = 3.3V,

AMB = 25

oC, TxIN = Vcc or GND

LOGIC INPUTS AND RECEIVER OUTPUTS

Input Logic Threshold LOW

GND

0.8

TxIN, EN, SHDN, Note 2

Input Logic Threshold HIGH

2.0

Vcc

Vcc = 3.3V, Note 2

Input Logic Threshold HIGH

2.4

Vcc

Vcc = 5.0V, Note 2

Input Leakage Current

+0.01

+1.0

µA

TxIN, EN, SHDN,

AMB = +25

oC, V

IN = 0V to VCC

Output Leakage Current

+0.05

+10

µA

Receivers disabled, V

OUT = 0V to VCC

Output Voltage LOW

0.4

OUT = 1.6mA

Output Voltage HIGH

CC -0.6

CC -0.1

OUT = -1.0mA

DRIVER OUTPUTS

Output Voltage Swing

+5.0

+5.4

All driver outputs loaded with 3kΩ to

GND, T

AMB = +25

NOTE 2: Driver Input hysteresis is typically 250mV.

ABSOLUTE MAXIMUM RATINGS

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