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2SC2899 Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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2SC2899 Datasheet(HTML) 1 Page - Hitachi Semiconductor |
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1 / 7 page ![]() 2SC2899 Silicon NPN Triple Diffused Application High speed and high voltage switching Outline 1. Emitter 2. Collector 3. Base TO-126 MOD 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 500 V Collector to emitter voltage V CEO 400 V Emitter to base voltage V EBO 10 V Collector current I C 0.5 A Collector peak current I C(peak) 1.0 A Collector power dissipation P C 0.75 W P C* 1 10 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at T C = 25°C. |
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