STP6506 datasheet(3/6 Pages) STANSON

3 / 6 page

STP6506

Dual P Channel Enhancement Mode MOSFET

-2.8A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP6506 2010. V1

ELECTRICAL CHARACTERISTICS

( Ta = 25

Unless otherwise noted )

℃

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-30

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA

-1

-3

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS=-24V,VGS=0V

-1

VDS=-24V,VGS=0V

TJ=55℃

-10

On-State Drain Current

ID(on)

VDS≦-5V,VGS=-10V

-6

Drain-source On-Resistance

RDS(on)

VGS=-10V,ID=-2.8A

0.088

0.103

VGS=-4.5V,ID=-2.5A

0.110

0.132

Forward Transconductance

gfs

VDS=-10V,ID=-2.8A

-4.0

Diode Forward Voltage

VSD

IS=-1.2A,VGS=0V

-0.8

-1.2

Dynamic

Total Gate Charge

5.8

Gate-Source Charge

Qgs

0.8

Gate-Drain Charge

Qgd

1.5

Input Capacitance

Ciss

VDS=-15V,VGS=-0V,

f=1MHz

226

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-On Time

Td(on)

VDD=-15V, RL=15 ,

VGEN=-10V, RG=6

ID=1.0A

Turn-Off Time

Td(off)

VDS=-15V,VGS=-10V,

VDS=-1.7A

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