2N3055 datasheet(1/3 Pages) TGS

Part #	2N3055

Description	Silicon NPN Power Transistor

PDF	3 Pages

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Manufacturer	TGS [Tiger Electronic Co.,Ltd]

Direct Link	http://www.tgselec.com

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Silicon NPN Power Transistor

2N3055

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain-hFE=20-70@IC = 4A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.1 V(Max)@ IC = 4A

·Complement to Type MJ2955

APPLICATIONS

·Designed for general-purpose switching and amplifier

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCER

Collector-Emitter Voltage

70

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

15

A

IB

B

Base Current

7

A

PC

Collector Power Dissipation@TC=25℃

115

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.52

℃/W

1

TIGER ELECTRONIC CO.,LTD

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