2SA562 datasheet(1/2 Pages) TGS

Part #	2SA562

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	TGS [Tiger Electronic Co.,Ltd]

Direct Link	http://www.tgselec.com

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TO-92 Plastic-Encapsulate Transistors

2SA562

TRANSISTOR (PNP)

FEATURES

Excellent hFE Linearlity

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-35

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-500

mA

PC

Collector Power Dissipation

500

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= -100μA , IE=0

-35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA ,

IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-35V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

DC current gain

hFE

VCE=-1V, IC=-100mA

70

240

Collector-emitter saturation voltage

VCE(sat)

IC= -100mA, IB= -10mA

-0.25

V

Base-emitter voltage

VBE

VCE=-1V,IC=-100mA

-1

V

Transition frequency

fT

VCE= -6V, IC= -20mA

200

MHz

Collector output capacitance

Cob

VCB=-6V,IE=0,f=1MHz

13

pF

CLASSIFICATION OF hFE

RANK

O

Y

RANGE

70-140

120-240

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

,2011

TIGER ELECTRONIC CO.,LTD

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