Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Oct. 2013. Rev. 3.0

1/5

SAMWIN

Features

■

High ruggedness

■

■

Gate Charge (Typ 66 nC)

■

Improved dv/dt Capability

■

100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a

electronic ballast, and also low power switching mode power appliances.

N-channel TO-220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain to Source Voltage

500

V

15.0*

A

9.5*

A

Drain current pulsed

(note 1)

60

A

Gate to Source Voltage

±

30

V

Single pulsed Avalanche Energy

(note 2)

1811

mJ

Repetitive Avalanche Energy

(note 1)

266

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

34.6

W

0.28

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

3.616

Thermal resistance, Case to Sink

Thermal resistance, Junction to ambient

43.52

: 15A

1

2

3

SW15N50

SW15N50

1

2

3

1. Gate 2. Drain 3. Source

TO-220F

Item

Sales Type

Marking

Package

Packaging

1

SW F 15N50

SW15N50

TO-220F

TUBE

Order Codes

*. Drain current is limited by junction temperature.