SSFN3317

Gate-Body Leakage Current

I

V =±25V,V =0V

±100

nA

GSS

GS

DS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

-1.7

-2.2

-3

V

V =-4.5V, I

GS

26

36

mΩ

Drain-Source On-State Resistance

V =-10V, I

GS

14

18

mΩ

Forward Transconductance

g

V =-5V,I

FS

DS

18

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

1200

PF

lss

Output Capacitance

260

PF

V =-15V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

145

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

10

nS

d(on)

Turn-on Rise Time

t

9

nS

r

Turn-Off Delay Time

22

nS

V =-15V,V =-10V,R

Turn-Off Fall Time

DS

GS

8

nS

Total Gate Charge

Q

18

nC

g

Gate-Source Charge

5

nC

V =-15V,I

Gate-Drain Charge

DS

=-10V

GS

3.5

nC

Body Diode Reverse Recovery Time

T

24

nS

rr

Body Diode Reverse Recovery Charge

Q

12

nC

rr

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =-1A

-0.74

-1

V

SD

GS

S

NOTES:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

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