56N3LLH5 datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STL56N3LLH5

4/16

Doc ID 18415 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0, ID = 250 µA

IDSS

Zero gate voltage drain

current

VGS= 0, VDS = 30 V,

µA

VGS= 0

VDS = 30 V, TC = 125 °C

µA

IGSS

Gate body leakage current

VDS = 0, VGS = +22 / -20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 7.5 A

VGS= 4.5 V, ID= 7.5 A

0.0076

0.0099

0.009

0.0112

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

950

193

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 15 A

VGS =4.5 V

Figure 14

6.5

3.3

2.4

Gate input resistance

f=1 MHz gate DC bias=0

test signal level = 20 mV

open drain

-1.7

2.5

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=15 V, ID= 7.5 A,

RG=4.7 Ω, VGS=10 V

Figure 13

10.8

15.6

14.2

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