HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6108

Issued Date : 1997.09.05

Revised Date : 2001.08.13

Page No. : 1/3

HA8550

HSMC Product Specification

HA8550

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HA8550 is designed for use in 2W output amplifier of portable radios in

class B push-pull operation.

Features

• High total power dissipation (PT: 2W, TC=25°C)

• High collector current (IC: 1.5A)

• Complementary to HA8050

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ....................................................................................................... -55 ~ +150

°C

Junction Temperature................................................................................................ +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C)................................................................................................... 1 W

Total Power Dissipation (Tc=25

°C) ................................................................................................... 2 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage.................................................................................................... -40 V

VCEO Collector to Emitter Voltage................................................................................................. -25 V

VEBO Emitter to Base Voltage......................................................................................................... -6 V

IC Collector Current ..................................................................................................................... -1.5 A

IB Base Current ............................................................................................................................ -0.5 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

-

-

V

IC=-100uA

BVCEO

-25

-

-

V

IC=-2mA

BVEBO

-6

-

-

V

IE=-100uA

ICBO

-

-

-100

nA

VCB=-35V

IEBO

-

-

-100

nA

VEB=-6V

*VCE(sat)

-

-

-0.5

V

IC=-0.8A, IB=-80mA

*VBE(sat)

-

-

-1.2

V

IC=-0.8A, IB=-80mA

VBE(on)

-

-

-1

V

VCE=-1V, IC=-10mA

*hFE1

45

-

-

VCE=-1V, IC=-5mA

*hFE2

85

-

500

VCE=-1V, IC=-100mA

*hFE3

40

-

-

VCE=-1V, IC=-800mA

fT

100

-

-

MHz

VCE=-10V, IC=-50mA, f=100MHZ

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Classification on hFE2

Rank

C

D

E

Range

120-200

160-320

250-500